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 TLP921
Toshiba Photoreflective sensor Infrared LED + Phototransistor
TLP921
Inkjet printer's ink-level monitoring
TLP921 is a reflective photosensor combining a GaAs infrared LED with a Si phototransistor. * * * * * Flush-mount package on PCB: Applied PCB thickness = 1.6 mm or thinner Positioning pin and single-sided screw-mount type Short lead type: Lead length = 2.8 0.3 mm Phototransistor impermeable to visible light Package material: polybutylene-terephthalate (UL94V-0, black)
Maximum Ratings (Ta = 25C)
Characteristics Forward current Forward current derating (Ta > 25C) Reverse voltage Collector-Emitter voltage Emitter-Collector voltage Detector Collector power dissipation Collector power dissipation derating (Ta > 25C) Collector current Operating temperature Storage temperature Soldering temperature (5 s) (Note 1) LED Symbol IF DIF/C VR VCEO VECO PC DPC/C IC Topr Tstg Tsol Rating 50 -0.33 5 35 5 75 -1 50 -30~85 -40~100 260 Unit mA mA/C V V V mW mW/C mA C C C
JEDEC JEITA TOSHIBA Weight: 0.35 g (typ.)

Note 1: Soldering is performed 1.5 mm from the bottom of the package.
Marking
Monthly lot number Month of manufacture Year of manufacture January to December are denoted by letters A to L respectively Last decimal digit of the year of manufacture
1
2002-04-03
TLP921
Electrical and Optical Characteristics (Ta = 25C)
Characteristics Forward voltage LED Reverse current Peak emission wavelength Detector Dark current Peak sensitivity wavelength Collector current Leakage current Coupled Collector-Emitter saturation voltage Rise time Fall time Symbol VF IR lP ID (ICEO) lP IC ILEAK VCE (sat) tr tf Test Condition IF = 20 mA VR = 5 V IF = 20 mA VCE = 24 V, IF = 0 3/4 VCE = 5 V, IF = 20 mA VCE = 5 V, IF = 20 mA IF = 20 mA, IC = 0.3 mA VCE = 2 V, IC = 0.5 mA RL = 1 kW, d = 8 mm (Note 4) (Note 2) (Note 3) Min 3/4 3/4 3/4 3/4 3/4 580 3/4 3/4 3/4 3/4 Typ. 1.25 3/4 940 3/4 870 3/4 3/4 0.1 38 48 Max 1.4 10 3/4 0.1 3/4 2600 120 0.4 90 110 Unit V mA nm mA nm mA mA V ms
Note 2: The following drawings show condition and the layout of reflectors.
Right angle prism (material: BK7) Thickness:7 mm 7 mm 7 mm
8 mm
Sensor
Note 3: Measurement layout drawing for leakage current
Evaporated surface of aluminum 1 mm Evaporated aluminum glass 8 mm
Sensor
Note 4: Measurement circuit and waveforms for Switching time
Prism IF IF RL VCC VOUT VOUT tr tf 90% 10%
2
2002-04-03
TLP921
Handling Precautions
* When removing flux with chemicals after soldering, clean only the soldered part of the leads. Do not immerse the entire package in the cleaning solvent. Chemical residue on the LED emitter or the photodetector inside the phototransistor case may adversely affect the optical characteristics of the device and may drastically reduce the collector current. The case is made of polybutylene-terephthalate. Oil or chemicals may cause the package to melt or crack. Care must be taken in relation to the environment in which the device is to be installed. Mount the device on a level surface. The collector current characteristic will deteriorate over time due to current flowing in the infrared LED. The design of circuits which incorporate the device must take into account the change in collector current over time. When the 2-mm hole is used as screw fixation, please fastening torque 0.1 N or less.
* * *
*
3
2002-04-03
TLP921
Package Dimensions
Weight: 0.35g (typ.)
Pin connection
1 2 4 3 1: 2: 3: 4: Anode Cathode Emitter Collector
4
2002-04-03
TLP921
IF - Ta
80 80
PC - Ta
(mA)
Allowable forward current
IF
60
Allowable collector power dissipation PC (mW)
20 40 60 80 100
60
40
40
20
20
0 0
0 0
20
40
60
80
100
Ambient temperature Ta (C)
Ambient temperature Ta (C)
IF - VF
100
(typ.)
5000 Ta = 25C VCE = 2 V VCE = 5 V
IC - IF
(typ.)
50
(mA)
30
Forward current IF
Collector current
0 -25 1.2 1.3 1.4
IC
10 100 5 3 Ta = 75C 50 25 10 1 0.8 0.9 1.0 1.1 1 0.1
(mA)
1000
0.3
1
3
10
30
100
300
1000
Forward voltage
VF
(V)
Forward current
IF
(mA)
Relative IC - Ta
1.2
(typ.)
1200 Ta = 25C
IC - VCE
(typ.)
Relative collector current
(mA)
1
1000
20
0.8
IC
800 15 600 10
0.6 VCE = 5 V IF = 20 mA IF = 10 mA 0.2 -40 IF = 5 mA -20 0 20 40 60 80 100
Collector current
400
0.4
200 IF = 5mA 0 0 2 4 6 8 10 12
Ambient temperature Ta (C)
Collector-Emitter voltage VCE
(V)
5
2002-04-03
TLP921
VCE (sat) - Ta
0.2
(typ.)
5
ID (ICEO) - Ta
(typ.)
Collector-Emitter saturation voltage VCE (sat) (v)
0.16
(mA)
1 VCE = 24 V 10 10-1 5
0.12
Dark current ID (ICEO)
0.08
10-2
0.04
0 -40
IF = 20mA IC = 0.3 mA IC = 0.5 mA -20 0 20 40 60 80 100
10-3
10-4 0
20
40
60
80
100
120
Ambient temperature Ta (C)
Ambient temperature Ta (C)
Switching characteristics (non saturated operation) (typ.)
3000 3000
Switching characteristics (saturated operation) (typ.)
1000
tr tf
1000
tf
td 100 100
(ms)
Switching time
Switching time
(ms)
ts
10
10
tr
td ts 1 1 0.5 1 1
Ta = 25C VCE = 2 V VOUT = 0.5 V 10 100
0.5 1
Ta = 25C VCE = 5 V VOUT > 4.6 V = 10 100
Load resistance RL (kW)
Load resistance RL (kW)
6
2002-04-03
TLP921
Spectral response characteristic (typ.)
100 IF = 20 mA Ta = 25C 0.8 80 Ta = 25C
Wavelength characteristic
1.0
(typ.)
Relative intensity
0.6
Relative sensitivity
(%)
60 0.4 40 0.2 20 0 820
860
900
940
980
1020
0 0
200
400
600
800
1000
1200
Wavelength l
(nm)
Wavelength l
(nm)
Detecting position characteristic I < Relative IC - X direction > (typ.)
1.2 Ta = 25C IF = 20 mA VCE = 5 V Prism d = 8 mm 1.2
Detecting position characteristic II < Relative IC - Y direction > (typ.)
1
1
Relative collector current
0.8
Relative collector current
0.8
0.6
-l
+l
0.6
Ta = 25C IF = 20 mA VCE = 5 V Prism
0.4
0.4 d = 8 mm
0.2
0.2
-l
+l
0 -5
-4
-3
-2
-1
0
1
2
3
4
5
0 -5
-4
-3
-2
-1
0
1
2
3
4
5
Prism moving distance
I (mm)
Prism moving distance
I (mm)
Detecting distance characteristic < Relative IC - Z direction > (typ.)
1
Relative collector current
0.3
0.1
Ta = 25C IF = 20 mA VCE = 5 V Prism
0.03 d 0.01 0
2
4
6
8
10
12
14
16
18
20
Distance between device and prism
d
(mm)
7
2002-04-03
TLP921
RESTRICTIONS ON PRODUCT USE
000707EAC
* TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * Gallium arsenide (GaAs) is a substance used in the products described in this document. GaAs dust and fumes are toxic. Do not break, cut or pulverize the product, or use chemicals to dissolve them. When disposing of the products, follow the appropriate regulations. Do not dispose of the products with other industrial waste or with domestic garbage. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. * The information contained herein is subject to change without notice.
8
2002-04-03


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